300W Isolated DC-DC Converter(Upgraded)

This design supports a wide input voltage range of DC 36 to 75V and provides a DC 12V output with a power capacity of 300W. Thanks to replacement of Toshiba latest MOSFET and digital isolator, and circuit optimization, it achieves higher efficiency at whole load condition compared with the existing reference design with the same topology.
We provide design information including key circuit design points, usage instructions, adjustment methods for each section, circuit diagrams, and PCB layout data to support your development.

Board Appearance
Board Appearance
TPN1200APL TPN1200APL TPN1200APL TPN1200APL TPN1200APL TPH2R70AR5 TPH2R70AR5 TPH2R70AR5 DCL520C00 DCL520C00

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特点

  • Equipped with Toshiba latest generation devices and circuit optimization achieve higher efficiency than the existing design.
  • Wide input voltage range of 36 to 75V and can be applied to 48V systems.
  • Conversion efficiency: 94.6% (at Vin = 48V, 100% Load)
  • Outline size: 82mm x 82mm x 24mm
  • The use of a wound structure transformer facilitates deployment in real world applications.

说明

Input voltage DC 36 to 75V
Output voltage DC 12V
Output power 300W
Circuit topology Phase Shift Full Bridge
Efficiency Curves
Efficiency Curves

设计文档

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设计数据

我们提供可加载到EDA工具中的电路数据、PCB布局数据以及PCB制造中使用的数据。多个工具供应商为您提供了多种格式。您可以使用您的工具进行自由编辑。

*1:实际PCB是在CR8000BD上设计的。其他文件均根据CR8000BD文件制作。

*2:数据是在CR8000BD上生成的。

东芝产品

器件型号 器件目录 搭载部位・数量 说明
Power MOSFET (N-ch single 60V<VDSS≤150V) Primary-side･4 N-ch MOSFET, 100 V, 0.0115 Ω@10V, TSON Advance, U-MOSⅨ-H
Power MOSFET (N-ch single 60V<VDSS≤150V) Secondary-side･4 N-ch MOSFET, 100 V, 0.0027 Ω@10V, Qrr=55nC@100A/μs, SOP Advance(N), U-MOS11-H
Standard Digital Isolators Communication between primary-side and secondary-side･1 HIGH SPEED DIGITAL ISOLATORS, High-speed, 150 Mbps, 3000 Vrms, 8pin SOIC Narrow body

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