SiC MOSFET (TOLL Package) Half-bridge Board

This design is populated with two of our latest SiC MOSFETs in a half-bridge configuration, enabling easy evaluation of SiC MOSFETs, whose demand has been increasing in recent years.
It provides detailed information including key design points of each circuit block, usage instructions, adjustment methods, as well as schematic diagrams and PCB layout data, helping support your power electronics designs.

Board Appearance
Board Appearance
TW027U65C /info/lookup.jsp?pid=TW048U65C

Click on components for more details

特点

  • Equipped with our latest-generation surface-mount SiC MOSFETs
  • Supports DC-DC converter operation using a half-bridge topology
  • Achieves a maximum efficiency of 99.5% during boost converter operation (Vin = 325V at 3kW output)

说明

  • Board Name: TW027U65C-Mounted Board / TW048U65C-Mounted Board
  • Mounted Device: TW027U65C / TW048U65C
  • Substrate Structure: FR-4, 4-Layers (through-hole via), t1.6mm, Cu Thickness 155μm (outer layers), 140μm (inner layers)
  • Functions: Miller Clamp (High-side / Low-side), Thermistor for Board Temperature Measurement
Efficiency Curve
Efficiency Curve

设计文档

我们向设计人员提供电路操作概要和设计要点说明等资料。请单击每个选项卡，将其用于电路设计。

设计数据

我们提供可加载到EDA工具中的电路数据、PCB布局数据以及PCB制造中使用的数据。多个工具供应商为您提供了多种格式。您可以使用您的工具进行自由编辑。

*1:实际PCB是在CR8000BD上设计的。其他文件均根据CR8000BD文件制作。

*2:数据是在CR8000BD上生成的。

东芝产品

器件型号 器件目录 搭载部位・数量 说明
Power SiC MOSFETs Half-bridge・2 N-ch SiC MOSFET, 650 V, 0.027 Ω(typ.)@18 V, TOLL, 3rd Gen.
Power SiC MOSFETs Half-bridge・2 N-ch SiC MOSFET, 650 V, 0.048 Ω(typ.)@18 V, TOLL, 3rd Gen.

相关文档

我们提供有助于设计和研究相似电路的参考资料，例如已安装产品的应用说明。请单击每个选项卡使用这些资料。

联系我们

技术咨询

联系我们

联系我们

常见问题

常见问题（FAQ）
Membership registration required
在新窗口打开