产品概要

Application Scope Power Management Switches
Polarity N-ch + P-ch
Generation U-MOSⅦ-H / U-MOSⅥ
Internal Connection Independent
PPAP Capable(*)
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

封装

Toshiba Package Name TSOP6F
Package Image 东芝 SSM6L820R Small-signal MOSFET 2 in 1产品 TSOP6F 封装图片
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
2.9×2.8×0.8
Package Dimensions 查看
Land pattern dimensions 查看
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>*1 *3

Download from UltraLibrarian® in your desired CAD format
*1 *3

SamacSys CAD model
(Symbol, Footprint and 3D model)
Download from SamacSys<br>*2 *3

Download from SamacSys
*2 *3

 Please refer to the link destination to check the detailed size.

*1

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

*2

SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.

*3

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

绝对最大额定值

项目 符号 单位
Drain-Source voltage (Q1) VDSS 30 V
Gate-Source voltage (Q1) VGSS -8/+12 V
Drain current (Q1) ID 4 A
Drain-Source voltage (Q2) VDSS -20 V
Gate-Source voltage (Q2) VGSS -12/+6 V
Drain current (Q2) ID -4 A
Power Dissipation PD 1.4 W

电气特性

项目 符号 条件 单位
Gate threshold voltage (Q1) (Max) Vth - 1.0 V
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=1.8V 82
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=2.5V 53
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=4.5V 39.1
Input capacitance (Q1) (Typ.) Ciss - 310 pF
Total gate charge (Q1) (Typ.) Qg VGS=4.5V 3.2 nC
Gate threshold voltage (Q2) (Max) Vth - -1.2 V
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-10V 45
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-4.5V 56
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-2.5V 76
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-1.8V 157
Input capacitance (Q2) (Typ.) Ciss - 480 pF
Total gate charge (Q2) (Typ.) Qg VGS=-4.5V 6.7 nC
购买及样品申请
请联系东芝官方代理商或就近联系我们的销售网点。
您可以通过以下链接搜索及购买少量样品。

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May,2020

Feb,2024

Apr,2026

May,2026

May,2026

可订购器件型号

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS AEC-Q100
AEC-Q101
Note 库存查询
SSM6L820R,LF 3000 Yes - General Use
SSM6L820R,LXGF 3000 - Yes Yes (Note) Unintended Use (Note)
SSM6L820R,LXHF 3000 - Yes Yes Automotive Use

(Note):For more information, please contact our sales or use the inquiry form on our website.


应用

大型太阳能逆变器
在设计大型太阳能逆变器时,高效率和小型化等非常重要。东芝提供了适用于逆变器电路单元、栅极驱动电路单元、信号传输单元等的各种半导体产品的信息以及电路配置示例。

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常见问题

常见问题(FAQ)

Notes

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