Small-signal MOSFET 2 in 1
| Application Scope | Power Management Switches / High-Speed Switching |
|---|---|
| Polarity | P-ch×2 |
| Generation | U-MOSⅢ |
| Internal Connection | Independent |
| Component Product (Q1) | SSM6P39TU |
| Component Product (Q2) | SSM6P39TU |
| AEC-Q101 | Qualified(*) |
| RoHS Compatible Product(s) (#) | Available |
*: For detail information, please contact to our sales.
| Toshiba Package Name | SOT-363F (UF6) |
|---|---|
| Package Image |
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| Package Code | SOT-363F |
| Pins | 6 |
| Mounting | Surface Mount |
| Width×Length×Height (mm) |
2.0×2.1×0.7 |
| Package Dimensions | 查看 |
| Land pattern dimensions | 查看 |
| Ultra Librarian® CAD model (Symbol, Footprint and 3D model) |
![]() Download from UltraLibrarian® in your desired CAD format |
| SamacSys CAD model (Symbol, Footprint and 3D model) |
Download from SamacSys |
Please refer to the link destination to check the detailed size.
|
(Note1) |
Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®. |
|
(Note2) |
SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys. |
|
(Note3) |
Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website. |
| 项目 | 符号 | 值 | 单位 |
|---|---|---|---|
| Drain-Source voltage (Q1/Q2) | VDSS | -20 | V |
| Gate-Source voltage (Q1/Q2) | VGSS | +/-8 | V |
| Drain current (Q1/Q2) | ID | -1.5 | A |
| Power Dissipation | PD | 0.5 | W |
| 项目 | 符号 | 条件 | 值 | 单位 |
|---|---|---|---|---|
| Gate threshold voltage (Q1/Q2) (Max) | Vth | - | -1.0 | V |
| Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=4V | 213 | mΩ |
| Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=2.5V | 294 | mΩ |
| Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=1.8V | 430 | mΩ |
| Input capacitance (Q1/Q2) (Typ.) | Ciss | - | 250 | pF |
| Total gate charge (Q1/Q2) (Typ.) | Qg | VGS=-4V | 6.4 | nC |